Product Summary
The BC817-40 is an NPN general purpose transistor. It is in a SOT23 plastic package. The device is designed for general purpose switching and amplification.
Parametrics
BC817-40 absolute maximum ratings: (1)VCBO collector-base voltage: max=50 V; (2)VCEO collector-emitter voltage: max=45 V; (3)VEBO emitter-base voltage: max=5 V; (4)IC collector current (DC): max=500 mA; (5)ICM peak collector current: max=1 A; (6)IBM peak base current: max=200 mA; (7)Ptot total power dissipation Tamb: max=250 mW; (8)Tstg storage temperature: min=-65℃, max=+150 ℃; (9)Tj junction temperature: max=150 ℃; (10)Tamb operating ambient temperature: min=-65℃, max=+150 ℃.
Features
BC817-40 features: (1)High current (max. 500 mA); (2)Low voltage (max. 45 V).
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BC817-40 |
![]() Taiwan Semiconductor |
![]() Transistors Bipolar (BJT) Transistor 300mW |
![]() Data Sheet |
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![]() |
![]() BC817-40 /T3 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-13 |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BC817-40,215 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) NPN GP 500 45V |
![]() Data Sheet |
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![]() |
![]() BC817-40,235 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-13 |
![]() Data Sheet |
![]()
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![]() |
![]() BC817-40-7 |
![]() Diodes Inc. |
![]() Transistors Bipolar (BJT) NPN BIPOLAR |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BC817-40-7-F |
![]() Diodes Inc. |
![]() Transistors Bipolar (BJT) NPN BIPOLAR |
![]() Data Sheet |
![]()
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![]() |
![]() BC817-40E6327 |
![]() Infineon Technologies |
![]() Transistors Bipolar (BJT) NPN 45 V 500 mA |
![]() Data Sheet |
![]() Negotiable |
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![]() BC817-40LT1 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 500mA 50V NPN |
![]() Data Sheet |
![]() Negotiable |
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