Product Summary

The FDN304P-NL is a P-Channel 2.5V specified MOSFET. It uses a rugged gate version of Fairchild’s advanced PowerTrench process. The FDN304P-NL has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications are Power management, Load switch and Battery protection.

Parametrics

FDN304P-NL absolute maximum ratings: (1)VDSS Drain-Source Voltage –20 V; (2)VGSS Gate-Source Voltage ±12 V; (3)ID Drain Current–2.4 A; (4)Maximum Power Dissipation 0.46W; (5)TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150℃.

Features

FDN304P-NL features: (1)–20 V, –2.4 A. RDS(ON) = 0.055Ω @ VGS = –4.5 V RDS(ON) = 0.080Ω @ VGS = –2.5 V; (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

Diagrams

FDN304P-NL block diagram

FDN302P
FDN302P

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 2.5V

Data Sheet

0-1: $0.28
1-25: $0.23
25-100: $0.16
100-250: $0.15
FDN302P_Q
FDN302P_Q

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 2.5V

Data Sheet

0-1: $0.12
1-25: $0.12
25-100: $0.11
100-250: $0.11
FDN304P
FDN304P

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 1.8V

Data Sheet

0-1: $0.31
1-25: $0.25
25-100: $0.18
100-250: $0.16
FDN304PZ_Q
FDN304PZ_Q

Fairchild Semiconductor

MOSFET P-Ch PowerTrench Specified 1.8V

Data Sheet

Negotiable 
FDN308P
FDN308P

Fairchild Semiconductor

MOSFET P-Ch PowerTrench Specified 2.5V

Data Sheet

0-1: $0.20
1-25: $0.17
25-100: $0.14
100-250: $0.11
FDN327N
FDN327N

Fairchild Semiconductor

MOSFET N-Ch PowerTrench 1.8 VGS Spec

Data Sheet

0-1: $0.22
1-25: $0.18
25-100: $0.15
100-250: $0.12