Product Summary
The 2N7002K is a 60v n-channel enhancement mode mosfet.
Parametrics
2N7002K absolute maximum ratings: (1)Drai n-Source Voltage V D S: 60 V; (2)Gate-Source Voltage V G S: +20 V; (3)Conti nuous Drai n Current ID: 300 mA; (4)Pulsed Drai n Current I D M: 2000 mA; (5)Maximum Power Di ssi pati on: TA =25℃ 350mW; TA =75℃ PD 210 mW; (6)Operati ng Juncti on and Storage Temperature Range TJ ,T S T G: -55 to + 150 ℃; (7)Junction-to Ambient Thermal Resistance(PCB mounted)2 Rθ J A: 357 ℃/W.
Features
2N7002K features: (1)RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology; (2)High Density Cell Design For Ultra Low On-Resistance; (3)Very Low Leakage Current In Off Condition; (4)Specially Designed for Battery Operated Systems, Solid-State Relays; (5)Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.; (6)ESD Protected 2KV HBM; (7)Component are in compliance with EU RoHS 2002/95/EC directives.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2N7002K |
Fairchild Semiconductor |
MOSFET 60V, 115mA N-Chan |
Data Sheet |
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2N7002K,215 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
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2N7002K-7 |
Diodes Inc. |
MOSFET N-Channel |
Data Sheet |
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2N7002K-7-99 |
Other |
Data Sheet |
Negotiable |
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2N7002KA |
Other |
Data Sheet |
Negotiable |
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2N7002KDW |
Other |
Data Sheet |
Negotiable |
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2N7002K-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 0.3A |
Data Sheet |
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2N7002KT1G |
ON Semiconductor |
MOSFET NFET SOT23 60V 380mA 7mOhm |
Data Sheet |
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