(China (Mainland))
Product Summary
The 2SC3240 is designed as silicon NPN epitaxial type transistor specifically for high power amplifiers in HF band. Typical applications is output stage of transmitter in HF band SSB mobile ratio sets.
Parametrics
Absolute maximum ratings: (1)Its collector to base voltage would be 50V. (2)Its emitter to base voltage would be 5V. (3)Its collector to base voltage would be 20V. (4)Its collector current would be 25A. (5)Its collector dissipation would be 270W. (7)Its junction temperature would be +175℃. (8)Its storage temperature range would be from -55℃ to +175℃.
Features
Features: (1)High gain which means Gpe>=11.5dB and Po>=100W at f=30MHz, Vcc=12.5V and Pin=7W. (2)High ruggedness: ability to withstand 20:1 load VSWR when operated at f=30MHz, Po=100W and Vcc=12.5V. (3)Emitter ballasted construction. (4)Low thermal resistance ceramic package with flange.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SC3240 |
Other |
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Data Sheet |
Negotiable |
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2SC3000 |
Other |
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Data Sheet |
Negotiable |
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2SC3011 |
Other |
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Data Sheet |
Negotiable |
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2SC3012 |
Other |
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Data Sheet |
Negotiable |
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2SC3025 |
Other |
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Data Sheet |
Negotiable |
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2SC3026 |
Other |
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Data Sheet |
Negotiable |
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2SC3038 |
Other |
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Data Sheet |
Negotiable |
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