Product Summary
The BC489G is a high current transistor(NPN silicon).
Parametrics
BC489G absolute maximum ratings: (1)Collector–Emitter Voltage: 80 Vdc; (2)Collector–Base Voltage: 80 Vdc; (3)Emitter–Base Voltage: 5.0 Vdc; (4)Collector Current — Continuous: 0.5 Adc; (5)Total Device Dissipation @ TA = 25°C: 625 mW; (6)Derate above 25°C: 5.0 mW/°C; (7)Total Device Dissipation @ TC = 25°C: 1.5 Watt; (8)Derate above 25°C: 12 mW/°C; (9)Operating and Storage Junction Temperature Range: –55 to +150 °C.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BC489G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1A 80V NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() Data Sheet |
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