(China (Mainland))
Product Summary
This N-Channel enhancement mode silicon gate power field effect transistor IRF330 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specialed level of energy in the breakdown avalanche mode of operation. IRF330 is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Parametrics
IRF330 absolute maximum ratings: (1)Drain to Source Breakdown Voltage VDS: 400 V; (2)Drain to Gate Voltage (RGS = 20kΩ;), VDGR: 400 V; (3)Continuous Drain Current, ID 5.5A; TC = 100℃, ID: 3.5A; (4)Pulsed Drain Current, IDM: 22 A; (5)Gate to Source Voltage, VGS: ±20 V; (6)Maximum Power Dissipation, PD: 75 W; (7)Linear Derating Factor: 0.6 W/℃; (8)Single Pulse Avalanche Energy Rating, EAS 300: mJ; (9)Operating and Storage Temperature, TJ, TSTG -55 to 150℃; (10)Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃; (11)Package Body for 10s, See Techbrief 334 ,Tpkg:260℃.
Features
IRF330 features: (1)5.5A, 400V; (2)rDS(ON)= 1.000Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5) Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature, TB334 Guidelines for Soldering Surface Mount Components to PC Boards.
Diagrams
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Pricing (USD) |
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 IRF330 |
Other |
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Data Sheet |
Negotiable |
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IRF3305 |
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MOSFET N-CH 55V 75A TO-220AB |
Data Sheet |
Negotiable |
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IRF3305PBF |
International Rectifier |
MOSFET |
Data Sheet |
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