(China (Mainland))
Product Summary
The TPV8100P is a NPN silicon RF power transistor. It is designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28V.
Parametrics
TPV8100P absolute maxing ratings: (1)IC: 12A; (2)VCER: 40V RBE = 10Ω; (3)PDISS: 215W @ TC = 25℃; (4)TJ: -65℃ to +200℃; (5)TSTG: -65℃ to +150℃; (6)θJC: 0.8℃/W.
Features
TPV8100P features: (1)Internal Input, Output Matching; (2)Common Emitter Configuration; (3)Gold Metalization; (4)Emitter Ballasting.
Diagrams
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 TPV8100 |
Other |
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Data Sheet |
Negotiable |
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TPV8100B |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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TPV8200B |
Other |
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Data Sheet |
Negotiable |
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