Product Summary

The TPV8100P is a NPN silicon RF power transistor. It is designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28V.

Parametrics

TPV8100P absolute maxing ratings: (1)IC: 12A; (2)VCER: 40V RBE = 10Ω; (3)PDISS: 215W @ TC = 25℃; (4)TJ: -65℃ to +200℃; (5)TSTG: -65℃ to +150℃; (6)θJC: 0.8℃/W.

Features

TPV8100P features: (1)Internal Input, Output Matching; (2)Common Emitter Configuration; (3)Gold Metalization; (4)Emitter Ballasting.

Diagrams

TPV8100
TPV8100

Other


Data Sheet

Negotiable 
TPV8100B
TPV8100B

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $121.13
1-10: $111.15
10-25: $99.75
25-50: $88.35
TPV8200B
TPV8200B

Other


Data Sheet

Negotiable