Product Summary
The MRF454 is an NPN silicon rf power transistor. It is designed for applications as a high–power linear amplifier from 2.0 to 30 MHz.
Parametrics
MRF454 absolute maximum ratings: (1)Collector–Emitter Voltage: 25 Vdc; (2)Collector–Base Voltage: 45 Vdc; (3)Emitter–Base Voltage: 4.0 Vdc; (4)Collector Current — Continuous: 20 Adc; (5)Total Device Dissipation @ TC = 25°C: 250 W; (6)Derate above 25°C: 1.43 W/°C; (7)Storage Temperature Range: –65 to +150 °C.
Features
MRF454 features: (1)Specified 12.5 Volt, 30 MHz Characteristics, Output Power = 80 W (PEP), Minimum Gain = 12 dB, Efficiency = 40%; (2)Intermodulation Distortion @ 80 W (PEP), IMD = -30 dB (Min); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR.
Diagrams
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![]() MRF454 |
![]() M/A-COM Technology Solutions |
![]() Transistors RF Bipolar Power 2-30MHz 80Watts 12.5Volt Gain 12dB |
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