RA20H8087M

20-watt, RF MOSFET Amplifier Module, DIP, 6 V, Low-Power Control Current, Mitsubishi

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PartNumber:: RA20H8087M

Brand:: Mitsubishi Electric Semiconductor - MES | Pack: DIP | D/C: 11+

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Products Upload time: 2011-07-04

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Part Number:RA20H8087M
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Product Summary

The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current of the RA20H8087M increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. The RA20H8087M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

Parametrics

RA20H8087M absolute maximum ratings: (1)VDD, Drain Voltage: 17 V at VGG<5V; (2)VGG, Gate Voltage: 6 V at VDD<12.5V, Pin=0mW; (3)Pin, Input Power: 100 mW at f=806-825/851-870MHz,ZG=ZL=50Ω; (4)Pout, Output Power: 40 W at f=806-825/851-870MHz,ZG=ZL=50Ω; (5)Tcase(OP), Operation Case Temperature Range: -30 to +110℃; (6)Tstg, Storage Temperature Range: -40 to +110℃.

Features

RA20H8087M features: (1)Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V); (2)Pout>20W, hT>25% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 806-825/ 851-870MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 66 x 21 x 9.88 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.