(China (Mainland))
Product Summary
The APT50GP60B20Q2G is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
Parametrics
APT50GP60B20Q2G absolute maximum ratings: (1)Collector-Emitter Voltage: 600 Volts; (2)Gate-Emitter Voltage: ±20 Volts; (3)Gate-Emitter Voltage Transient: ±30 Volts; (4)Continuous Collector Current 7 @ TC = 25°C: 100 Amps; (5)Continuous Collector Current @ TC = 110°C: 72 Amps; (6)Pulsed Collector Current 1 @ TC = 150°C: 190 Amps; (7)Safe Operating Area @ TJ = 150°C: 190A@600V; (8)Total Power Dissipation: 625 Watts; (9)Operating and Storage Junction Temperature Range: -55 to 150 °C; (10)Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec: 300 °C.
Features
APT50GP60B20Q2G features: (1)Low conduction loss; (2)Low gate charge; (3)Ultrafast tail current shutoff; (4)200 kHz operation @ 400V, 28A; (5)100 kHz operation @ 400V, 44A; (6)SSOA rated.
Diagrams
