(China (Mainland))
Product Summary
The BLF369 is a 500W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. The applications of the BLF369 include: Communication transmitter applications in the UHF band; Industrial applications in the UHF band.
Parametrics
BLF369 absolute maxing ratings: (1)On the conditions of VGS = 0 V; ID = 6 mA, V(BR)DSS drain-source breakdown voltage: min=65 V; (2)On the conditions of VDS = 20 V; ID = 600 mA, VGS(th) gate-source threshold voltage: min=4 V, max=5.5 V; (3)On the conditions of VGS = 0 V; VDS = 32 V, IDSS drain leakage current: max=4.2 mA; (4)On the conditions of VGS = VGS(th) + 9 V; VDS = 10 V, IDSX drain cut-off current: typ=100 A; (5)On the conditions of VGS = 20 V; VDS = 0 V, IGSS gate leakage current: max=60 nA; (6)On the conditions of VGS = 20 V; ID = 13 A, gfs forward transconductance: typ=15 S; (7)On the conditions of VGS = VGS(th) + 9 V; ID = 13 A, RDS(on) drain-source on-state resistance: typ=40 mW.
Features
BLF369 features: (1)Advanced flange material for optimum thermal behavior and reliability; (2)Excellent ruggedness; (3)High power gain; (4)Designed for broadband operation (HF/VHF band); (5)Source on underside eliminates DC isolators, reducing common mode inductance; (6)Easy power control; (7)Integrated ESD protection.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 BLF369 |
NXP Semiconductors (founded by Philips) |
TRANSISTOR RF LDMOS SOT800 |
Data Sheet |
Negotiable |
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BLF369,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 65V 100A |
Data Sheet |
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