(China (Mainland))
Product Summary
The BLF378. is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. Amarking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook General section for further information. The BLF378. is designed for industrial and military applications in the HF/VHF frequency range.
Parametrics
BLF378. absolute maximum ratings: (1)drain-source voltage:125V; (2)gate-source voltage:±20V; (3)drain current (DC):16A; (4)total power dissipation Tmb ≤ 25℃:220W; (5)storage temperature:-65℃ to +150℃; (6)junction temperature:200℃.
Features
BLF378. features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
 |
 BLF346 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFPR |
Data Sheet |
Negotiable |
|
||||||
|
BLF346,112 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFPR |
Data Sheet |
|
|
||||||
 |
BLF348 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
 |
BLF368 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFUH |
Data Sheet |
Negotiable |
|
||||||
|
BLF368,112 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFUH |
Data Sheet |
|
|
||||||
 |
BLF369 |
NXP Semiconductors (founded by Philips) |
TRANSISTOR RF LDMOS SOT800 |
Data Sheet |
Negotiable |
|
||||||
