IRF9530

P-channel power mosfets, TO-220, High input impedance

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PartNumber:: IRF9530

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2011-06-29

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Part Number:IRF9530
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Product Summary

The IRF9530 is P-Channel enhancement mode silicon gate power effect transistor. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciled level of energy in the breakdown avalanche mode of operation. IRF9530 is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17511.

Parametrics

IRF9530 absolute maximum ratings: (1) Drain to Source Breakdown Voltage: -100V; (2) Drain to Gate Voltage: -100V; (3)Continuous Drain Current: -12A. (4) Pulsed Drain Current: -48A. (5)Maximum Power Dissipation: 75W. (6)Operating and Storage Temperature: -55~150℃.

Features

IRF9530 features: (1)12A, 100V; (2) rDS(ON)= 0.300Ω; (3) Single Pulse Avalanche Energy Rated; (4) SOA is Power Dissipation Limited; (5) Nanosecond Switching Speeds; (6) Linear Transfer Characteristics; (7) High Input Impedance; (8) Related Literature: - TB334, “Guidelines for Soldering Surface Mount, Components to PC Boards.