(China (Mainland))
Product Summary
The CA3082F consists of seven high current (to 100mA)silicon NPN transistors on a common monolithic substrate. The CA3082F is connected in a common collector configuration. The applications of the CA3082F include: (1)Drivers for Incandescent Display Devices; LED Displays; (2)Relay Control; (3)Thyristor Firing.
Parametrics
CA3082F absolute maxing ratings: (1)Collector-to-Emitter Voltage (VCEO): 16V; (2)Collector-to-Base Voltage (VCBO): 20V; (3)Collector-to-Substrate Voltage (VCIO): 20V; (4)Emitter-to-Base Voltage (VEBO): 5V; (5)Collector Current (IC): 100mA; (6)Base Current (IB): 20mA.
Features
CA3082F features: (1)Common Collector Array; (2)Directly Drive Seven Segment Incandescent Displays and Light Emitting Diode (LED) Display; (3)7 Transistors Permit a Wide Range of Applications in Common Collector Configuration; (4)High IC: 100mA (Max); (5)Low VCESAT (at 50mA): 0.4V (Typ).
Diagrams
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