(China (Mainland))
Product Summary
The DS1230Y-100IND Nonvolatile SRAM is 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. The DS1230Y-100IND can be used in place of existing 32k x 8 static RAM directly conforming to the popular bytewide 28-pin DIP standard. The DS1230Y-100IND in the Low Profile Module package is specifically designed for surface-mount applications.
Parametrics
DS1230Y-100IND absolute maximum ratings: (1) Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2) Operating Temperature: 0 to 70°C, -40 to +85°C for IND parts; (3) Storage Temperature: -40 to +70°C, -40 to +85°C for IND parts; (4) Soldering Temperature: 260°C for 10 seconds.
Features
DS1230Y-100IND features: (1) 10 years minimum data retention in the absence of external power; (2) Data is automatically protected during power loss; (3) Replaces 32kx8 volatile static RAM. EEPROM or Flash memory; (4) Unlimited write cycles; (5) Low-power CMOS; (6) Read and write access times as fast as 70 ns; (7) Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8) Full ±10% Vcc operating range; (9) Optional industrial temperature range of -40°C to +85°C, designated IND; (10) JEDEC standard 28-pin DIP package; (11) New PowerCap Module (PCM) package.
Diagrams
