Product Summary

The FQB45N15 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The FQB45N15 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

Parametrics

FQB45N15 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 150V; (2)Drain Current, Pulsed, IDM: 180A; (3)Gate-Source Voltage, VGSS: ±30V; (4)Single Pulsed Avalanche Energy, EAS: 1124mJ; (5)Avalanche Current, IAR: 45A; (6)Repetitive Avalanche Energy, EAR: 22mJ; (7)Peak Diode Recovery dv/dt, dv/dt: 4.5V/ns; (8)Operating and Storage Temperature Range, TJ, TSTG: -55 to +175℃.

Features

FQB45N15 features: (1)45A, 150V, RDS(on)=0.04Ω @VGS=10V; (2)Low gate charge; (3)Low Crss ( typical 135 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQB45N15 simplified diagram

Image Part No Mfg Description Data Sheet Download Pricing
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FQB45N15V2
FQB45N15V2

Other


Data Sheet

Negotiable 
FQB45N15V2TM
FQB45N15V2TM

Fairchild Semiconductor

MOSFET N_ch/150V/45A

Data Sheet

Negotiable