(China (Mainland))
Product Summary
The FQB45N15 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The FQB45N15 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
Parametrics
FQB45N15 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 150V; (2)Drain Current, Pulsed, IDM: 180A; (3)Gate-Source Voltage, VGSS: ±30V; (4)Single Pulsed Avalanche Energy, EAS: 1124mJ; (5)Avalanche Current, IAR: 45A; (6)Repetitive Avalanche Energy, EAR: 22mJ; (7)Peak Diode Recovery dv/dt, dv/dt: 4.5V/ns; (8)Operating and Storage Temperature Range, TJ, TSTG: -55 to +175℃.
Features
FQB45N15 features: (1)45A, 150V, RDS(on)=0.04Ω @VGS=10V; (2)Low gate charge; (3)Low Crss ( typical 135 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 FQB45N15V2 |
Other |
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Data Sheet |
Negotiable |
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FQB45N15V2TM |
Fairchild Semiconductor |
MOSFET N_ch/150V/45A |
Data Sheet |
Negotiable |
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