(China (Mainland))
Product Summary
The MHW6342T/MHW8342 is a RF power field effect transistor. It is a N-channel enhancement-mode lateral MOSFET, which is designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 65Vdc; (2)Gate-Source Voltage, VGS: -0.5 to +15Vdc; (3)Total Device Dissipation at TC = 25℃, PD: 324Watts; (4)Total Device Dissipation Derate above 25℃, PD: 1.85W/℃; (5)Storage Temperature Range, Tstg: - 65 to +150℃; (6)Operating Junction Temperature, TJ: 200℃; (7)CW Operation, CW: 110Watts.
Features
Features: (1)Typical 2 -Carrier N-CDMA Performance for VDD = 28 Volts; (2)Internally Matched, Controlled Q, for Ease of Use; (3)High Gain, High Efficiency and High Linearity; (4)Integrated ESD Protection; (5)Designed for Maximum Gain and Insertion Phase Flatness; (6)Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,110 Watts CW Output Power; (7)Excellent Thermal Stability; (8)Characterized with Series Equivalent Large-Signal Impedance Parameters; (9)Qualified Up to a Maximum of 32 V Operation; (10)Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
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 MHW6122 |
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MHW6142 |
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MHW6172 |
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MHW6182 |
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MHW6182-6 |
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Negotiable |
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MHW6185-6A |
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Negotiable |
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