(China (Mainland))
Product Summary
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range.The RA60H1317M1A is designed for non-linear FM modulation, but the RA60H1317M1A may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
Parametrics
RA60H1317M1A absolute maximum ratings: (1)VDD Drain Voltage VGG<5V: 17 V; (2)VGG Gate Voltage VDD<12.5V, Pin=0mW: 5.5V; (3)Pin Input Power f=136-174MHz, ZG=ZL=50Ω: 100 mW; (4)Pout Output Power f=136-174MHz, ZG=ZL=50Ω: 80W; (5)Tcase(OP) Operation Case Temperature Range: -30 to +100 ℃; (6)Tstg Storage Temperature Range: -40 to +110 ℃.
Features
RA60H1317M1A features: (1)Enhancement-Mode MOSFET Transistors (IDD.0 @ VDD=12.5V, VGG=0V); (2)Pout>60W, ηT>45% ＠ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 136-174MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)RF Input (Pin); (6)Gate Voltage (VGG), Power Control; (7)Drain Voltage (VDD), Battery; (8)RF Output (Pout); (9)RF Ground (FIN); (10)PACKAGE CODE: H2S; (11)Module Size: 67 x 18 x 9.9 mm; (12)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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 RA60H1317M1A |
Other |
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Data Sheet |
Negotiable |
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