Product Summary

Fairchild’s SGH40N60UFDTU of Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGH40N60UFDTU is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Parametrics

SGH40N60UFDTU absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600V; (2)Gate-Emitter Voltage, VGES: ±20V; (3)Collector Current @ TC = 25℃, IC: 40A; (4)Collector Current @ TC = 100℃, IC: 20A; (5)Pulsed Collector Current, ICM: 160A; (6)Diode Continuous Forward Current @ TC = 100℃, IF: 15A; (7)Diode Maximum Forward Current, IFM: 160A; (8)Maximum Power Dissipation @ TC = 25℃, PD: 160W; (9)Maximum Power Dissipation @ TC = 100℃, PD: 64W; (10)Operating Junction Temperature, TJ: -55 to +150℃; (11)Storage Temperature Range, Tstg: -55 to +150℃.

Features

SGH40N60UFDTU features: (1)High speed switching; (2)Low saturation voltage: VCE(sat) = 2.1 V @ IC = 20A; (3)High input impedance; (4)CO-PAK, IGBT with FRD : trr = 42ns (typ.).

Diagrams

SGH40N60UFDTU symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SGH40N60UFDTU
SGH40N60UFDTU
Fairchild Semiconductor
IGBT Transistors Dis High Perf IGBT
Data Sheet
0-220: $1.92
220-250: $1.73
250-500: $1.55
500-1000: $1.31
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SGH40N60UF
SGH40N60UF
Other

Data Sheet
Negotiable 
SGH40N60UFD
SGH40N60UFD
Other

Data Sheet
Negotiable 
SGH40N60UFDM1TU
SGH40N60UFDM1TU
Fairchild Semiconductor
IGBT Transistors 600V/20A/WFRD
Data Sheet
Negotiable 
SGH40N60UFDTU
SGH40N60UFDTU
Fairchild Semiconductor
IGBT Transistors Dis High Perf IGBT
Data Sheet
0-220: $1.92
220-250: $1.73
250-500: $1.55
500-1000: $1.31
SGH40N60UFTU
SGH40N60UFTU
Fairchild Semiconductor
IGBT Transistors Dis High Perf IGBT
Data Sheet
0-220: $1.54
220-250: $1.39
250-500: $1.24
500-1000: $1.05