Product Summary
The CMT04N60 is a power MOSFET. This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. The CMT04N60 also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Parametrics
CMT04N60 absolute maximum ratings: (1)Drain to Current - Continuous: 4.0 A; (2)Gate-to-Source Voltage - Continue: ±20 V; (3)Total Power Dissipation TO-220: 96 W; (4)Operating and Storage Temperature Range: -55 to 150 ℃; (5)Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω): 80 mJ; (6)Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds: 260 ℃.
Features
CMT04N60 features: (1)Higher Current Rating; (2)Lower Rds(on); (3)Lower Capacitances; (4)Lower Total Gate Charge; (5)Tighter VSD Specifications; (6)Avalanche Energy Specified.
Diagrams
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CMT04N60 |
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CMT05N50 |
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CMT06N60 |
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CMT09N20 |
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