Product Summary

The APT50GP60B2002G POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology the APT50GP60B2002G is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

Parametrics

APT50GP60B2002G absolute maximum ratings: (1)Collector-Emitter Voltage: 600V; (2)Gate-Emitter Voltage: 20V; (3)Gate-Emitter Voltage Transient: 30V; (4)Continuous Collector Current 7 @ TC = 25°C: 100A; (5)Continuous Collector Current @ TC = 110°C: 72A; (6)Pulsed Collector Current 1 @ TC = 150°C: 190A; (7)Total Power Dissipation: 625W; (8)Operating and Storage Junction Temperature Range: -55 to 150°C; (9)Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.: 300°C.

Features

APT50GP60B2002G features: (1)Low Conduction Loss; (2)200 kHz operation @ 400V, 28A; (3)Low Gate Charge; (4)100 kHz operation @ 400V, 44A; (5)Ultrafast Tail Current shutoff; (6)SSOA rated.

Diagrams

APT50GP60B2002G pin connection