(China (Mainland))
Product Summary
The SI4925BDY is a Dual P-Channel 30-V (D-S) MOSFET.The applications of the device include Load Switches, Notebook PCs, Desktop PCs and Game Stations.
Parametrics
SI4925BDY absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃), ID: -7.1A at TA=25℃; -5.7V at TA=70℃; (4)Pulsed Drain Current, IDM: -40A; (5)continuous Source Current (Diode Conduction), IS: -1.7A; (6)Maximum Power Dissipation, PD: 2.0W at TA=25℃; 1.3W at TA=70℃; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150℃.
Features
SI4925BDY features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI4925BDY |
Vishay/Siliconix |
MOSFET 30V 7.1A 2W |
Data Sheet |
Negotiable |
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SI4925BDY-E3 |
Vishay/Siliconix |
MOSFET 30V 7.1A 2W |
Data Sheet |
Negotiable |
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SI4925BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 7.1 Amp 2.0W |
Data Sheet |
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SI4925BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 7.1A 2.0W 25mohm @ 10V |
Data Sheet |
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