(China (Mainland))
Product Summary
The BC817-25 is an NPN transistor in a SOT23 plastic package.
Parametrics
BC817-25 absolute maximum ratings: (1)collector-base voltage: 50 V; (2)collector-emitter voltage: 45 V; (3)emitter-base voltage: 5 V; (4)collector current (DC): 500 mA; (5)peak collector current: 1 A; (6)peak base current: 200 mA; (7)total power dissipation: 250 mW; (8)storage temperature: -65 +150 ℃; (9)junction temperature: +150 ℃; (10)operating ambient temperature: -65 +150 ℃.
Features
BC817-25 features: (1)Low current (max. 100 mA); (2)Low voltage (max. 40 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BC817-25 |
Taiwan Semiconductor |
Transistors Bipolar (BJT) Transistor 300mW |
Data Sheet |
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BC817-25 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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BC817-25,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
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 |
BC817-25-7 |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
Negotiable |
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BC817-25-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
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BC817-25E6327 |
Infineon Technologies |
Transistors Bipolar (BJT) NPN 45 V 500 mA |
Data Sheet |
Negotiable |
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BC817-25LT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 50V NPN |
Data Sheet |
Negotiable |
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BC817-25LT3 |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 50V NPN |
Data Sheet |
Negotiable |
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