(China (Mainland))
Product Summary
Employing NPT technology, FGL40N120AND of IGBTs provides low conduction and switching losses. The FGL40N120AND offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
Parametrics
FGL40N120AND absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200V; (2)Gate-Emitter Voltage, VGES: ±25V; (3)Collector Current @TC = 25℃, IC: 64A; (4)Collector Current @TC = 100℃, IC: 40A; (5)Pulsed Collector Current, ICM: 160A; (6)Diode Continuous Forward Current @TC = 100℃, IF: 40A; (7)Diode Maximum Forward Current, IFM: 240A; (8)Maximum Power Dissipation @TC = 25℃, PD: 500W; (9)Maximum Power Dissipation @TC = 100℃, PD: 200W; (10)Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125℃, SCWT: 10μs; (11)Operating Junction Temperature, TJ: -55 to +150℃; (12)Storage Temperature Range, TSTG: -55 to +150℃.
Features
FGL40N120AND features: (1)High speed switching; (2)Low saturation voltage:VCE(sat) = 2.6 V @ IC = 40A; (3)High input impedance; (4)CO-PAK, IGBT with FRD:trr = 75ns (typ.).
Diagrams
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FGL40N120ANDTU |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT IGBT |
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