(China (Mainland))
Product Summary
The SI2303BDS-T1 is a P-Channel 30-V (D-S) MOSFET.
Parametrics
SI2303BDS-T1 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Pulsed Drain Current, IDM: 10A; (4)Continuous Source Current (Diode Conduction), IS: -0.75 to 0.6A; (5)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150℃.
Features
SI2303BDS-T1 features: Halogen-free Option Available
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI2303BDS-T1 |
Vishay/Siliconix |
MOSFET 30V 1.64A 1.25W |
Data Sheet |
Negotiable |
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SI2303BDS-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 1.7A 1.25W |
Data Sheet |
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SI2303BDS-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 1.64A 0.9W 200mohm @ 10V |
Data Sheet |
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