Product Summary

The TLP421F is a GaAs IRed & Photo−Transistor.The TLP421F consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage.

Parametrics

TLP421F absolute maximum ratings: (1)TUV approved: DIN EN 60747-5-2 Approved no. 40010944; (2)Maximum operating insulation voltage: 1130VPK; (3)Maximum permissible over voltage: 8000VPK; (4)Creepage distance: 8.0 mm (min); (5)Clearance: 8.0 mm (min); (6)Insulation thickness: 0.4 mm (min).

Features

TLP421F features: (1)Collector−emitter voltage: 80V (min); (2)Current transfer ratio: 50% (min)Rank GB: 100% (min); (3)Isolation voltage: 5000 Vrms (min); (4)UL recognized: UL1577; (5)BSI approved: BS EN60065: 2002 Approved no. 8411 BS EN60950-1: 2002 Approved no. 8412; (6)SEMKO approved: EN60065, EN60950, EN60335 Approved no. 9910249 / 01.

Diagrams

TLP421F pin connection

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TLP421F
TLP421F

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1-10: $2.19
10-100: $1.70
100-250: $1.61
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0-1: $2.21
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0-1: $1.36
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100-250: $0.80
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Data Sheet

0-1: $2.50
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100-250: $1.48