(China (Mainland))
Product Summary
The HIT667-EQ is a silicon NPN epitaxial device. It is widely used in low frequency power amplifier, complementary pair with 2SB647/A.
Parametrics
HIT667-EQ absolute maximum ratings: (1)Collector to base breakdown voltage, V(BR)CBO: 120V; (2)Collector to emitter breakdown voltage, V(BR)CEO: 80V; (3)Emitter to base breakdown voltage, V(BR)EBO: 5V; (4)Collector current, IC: 1A; (5)Collector peak current, iC(peak): 2A; (6)Collector power dissipation, PC: 0.9W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature, Tstg: –50 to +150℃.
Features
HIT667-EQ feature: low power consumption.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 HIT667-EQ/647-EQ |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
HIT647 |
Other |
|
Data Sheet |
Negotiable |
|
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HIT667 |
Other |
|
Data Sheet |
Negotiable |
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HIT667-EQ/647-EQ |
Other |
|
Data Sheet |
Negotiable |
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HIT673 |
Other |
|
Data Sheet |
Negotiable |
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